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HY5S7B2ALFP-6 - 512M (16Mx32bit) Mobile SDRAM

HY5S7B2ALFP-6 Description

512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.
and is subject to change without notice.

HY5S7B2ALFP-6 Features

* Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK) MULTIBANK OPERATION - Internal 4bank operation - During burst Read or Write operation, burst Read or Write for a different bank is performed. - During b

HY5S7B2ALFP-6 Applications

* which requires large memory density and high bandwidth. It is organized as 4banks of 4,194,304x32. Mobile SDRAM is a type of DRAM which operates in synchronization with input clock. The Hynix Mobile SDRAM latch each control signal at the rising edge of a basic input clock (CLK) and input/output data

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Datasheet Details

Part number
HY5S7B2ALFP-6
Manufacturer
Hynix Semiconductor
File Size
1.84 MB
Datasheet
HY5S7B2ALFP-6_HynixSemiconductor.pdf
Description
512M (16Mx32bit) Mobile SDRAM

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📌 All Tags

512M 16Mx32bit Mobile SDRAM Hynix Semiconductor
Hynix Semiconductor HY5S7B2ALFP-6-like datasheet